Microstructure and electrical properties of CoNX thin films deposited by unbalanced magnetron sputtering

Authors
Asahara, H Migita, T Tanaka, T Kawabata, K
Citation
H. Asahara et al., Microstructure and electrical properties of CoNX thin films deposited by unbalanced magnetron sputtering, VACUUM, 62(2-3), 2001, pp. 293-296
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
62
Issue
2-3
Year of publication
2001
Pages
293 - 296
Database
ISI
SICI code
0042-207X(20010615)62:2-3<293:MAEPOC>2.0.ZU;2-Y
Abstract
The structure and electrical properties of cobalt nitride (CoNX) thin films , prepared by newly developed r.f. reactive sputtering with magnetically en hanced ionization by means of multipolar magnetic plasma confinement (MMPC) , were studied. In an unbalanced magnetron sputtering system with MMPC, fer romagnetic materials can be sputtered at a low gas pressure (8.0 x 10(-2) P a). It was found that lowering the total gas pressure (Ar + N-2) down to 8. 0 x 10(-2) Pa resulted in a decrease in the resistivity of the films, whose value is about 10 mu Omega cm. The average size of the grain decreased wit h a decrease in the total gas pressure. Nanocomposite films of cobalt nitri de with an average grain size of about 5 nm were formed by lowering the tot al gas pressure. (C) 2001 Elsevier Science Ltd. All rights reserved.