On the yellow-band emission in CdS films

Citation
R. Lozada-morales et al., On the yellow-band emission in CdS films, APPL PHYS A, 73(1), 2001, pp. 61-65
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
73
Issue
1
Year of publication
2001
Pages
61 - 65
Database
ISI
SICI code
0947-8396(200107)73:1<61:OTYEIC>2.0.ZU;2-V
Abstract
CdS polycrystalline thin films were prepared by the chemical bath depositio n (CBD) method on glass substrates. X-ray diffraction (XRD) studies show th at the films grow in the cubic zinc-blende crystalline phase. Upon thermal annealing (TA) in Ar + S-2 flux at normal pressure in the temperature range 240-510 degreesC, the evolution of the transformation into the hexagonal w urtzite phase is observed. This hexagonal crystalline structure is the stab le phase. From XRD diagrams the phase transition can be appreciated to occu r upon TA at approximately 300 degreesC. Photoluminescence (PL) data prove that the green-emission band is present for well-defined phases - cubic or hexagonal ones. A second band located at 2.2 eV appears for samples near th e transition region. This band at 2.2 eV, called the yellow band, has alrea dy been reported to be associated with interstitial Cd atoms. A model for t his yellow-band-mechanism formation, arising during the phase transformatio n, has been proposed based on Frenkel-pair creation.