Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

Citation
M. Bayindir et al., Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures, APPL PHYS A, 73(1), 2001, pp. 125-127
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
73
Issue
1
Year of publication
2001
Pages
125 - 127
Database
ISI
SICI code
0947-8396(200107)73:1<125:SEOSEI>2.0.ZU;2-E
Abstract
We investigated photoluminescence (PL) from one-dimensional photonic band g ap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a co upled-microcavity (CMC) structure, were fabricated by using alternating hyd rogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxid e layers. It was observed that these structures strongly modify the PL spec tra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC s tructure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission incr eased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of th e tight-binding approximation.