Characterization of near-surface traps in semiconductors: GaN

Authors
Citation
Dc. Look et Zq. Fang, Characterization of near-surface traps in semiconductors: GaN, APPL PHYS L, 79(1), 2001, pp. 84-86
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
1
Year of publication
2001
Pages
84 - 86
Database
ISI
SICI code
0003-6951(20010702)79:1<84:CONTIS>2.0.ZU;2-C
Abstract
We present a simple a criterion, based on deep-level transient spectroscopy peak heights S(V-r) at two or more values of reverse bias V-r, to unequivo cally determine whether or not a particular semiconductor trap is of bulk o r near-surface nature. Moreover, we present an expression for S(V-r) with f itting parameters phi (B), the Schottky barrier height; delta, the trap pen etration depth; and N-T, the trap density. Application of the method to a t hick, high-quality, epitaxial GaN layer, reveals two common traps which pen etrate only 2700 +/- 300 A into the layer. (C) 2001 American Institute of P hysics.