Percolation model of the temperature dependence of resistance in doped manganese perovskites

Authors
Yuan, SL Li, ZY Peng, G Xiong, CS Xiong, YH Tang, CQ
Citation
Sl. Yuan et al., Percolation model of the temperature dependence of resistance in doped manganese perovskites, APPL PHYS L, 79(1), 2001, pp. 90-92
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
1
Year of publication
2001
Pages
90 - 92
Database
ISI
SICI code
0003-6951(20010702)79:1<90:PMOTTD>2.0.ZU;2-2
Abstract
Assuming the sample to consist of ferromagnetic metallic (FMM) particles wi th a volume fraction (f) randomly distributed over the paramagnetic insulat ing background, Monte Carlo simulations of electrical conductivity show exc ellent fits to the data measured in (La1-xYx)(2/3)Ca1/3MnO3 (x=0, 0.1 and 0 .2). We find that the transition to metallic state occurs as the f reaches a percolation threshold, suggesting that the percolation of FMM domains is responsible for the observed insulator-metal transition. (C) 2001 American Institute of Physics.