Control of charging in resonant tunneling through InAs nanocrystal quantumdots

Citation
D. Katz et al., Control of charging in resonant tunneling through InAs nanocrystal quantumdots, APPL PHYS L, 79(1), 2001, pp. 117-119
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
1
Year of publication
2001
Pages
117 - 119
Database
ISI
SICI code
0003-6951(20010702)79:1<117:COCIRT>2.0.ZU;2-8
Abstract
Tunneling spectroscopy of InAs nanocrystals deposited on graphite was measu red using scanning tunneling microscopy, in a double-barrier tunnel-junctio n configuration. The effect of the junction symmetry on the tunneling spect ra is studied experimentally and modeled theoretically. When the tip is ret racted, we observe resonant tunneling through the nanocrystal states withou t charging. Charging is regained upon reducing the tip-nanocrystal distance , making the junction more symmetric. The effect of voltage distribution be tween the junctions on the measured spectra is also discussed. (C) 2001 Ame rican Institute of Physics.