Due to their great fabrication flexibility, multilayered conductive thin fi
lms are used as a shielding material by thin film metal plating on a dielec
tric body. In the simulation of the shielding effect of these multilayered
thin conducting films by the FDTD method, it is necessary to use a cell siz
e less than the conductor thickness in direct modeling. However, since the
shield material generally is much thicker than the metal thin film, the num
ber of cells needed in such modeling is prohibitive and calculation becomes
difficult. In this paper, as a subcell method in the FDTD approach, an inf
initesimally thin resistive film that has a transmission coefficient equiva
lent to the multilayered conducting thin film is introduced. By this techni
que, modeling becomes possible without increasing the number of cells unnec
essarily. (C) 2001 Scripta Technica, Electron Comm Jpn Pt 1, 84(12): 22-31,
2001.