Simulation of transmission waves through multilayered thin conducting sheets by FDTD method

Citation
T. Fukasawa et al., Simulation of transmission waves through multilayered thin conducting sheets by FDTD method, ELEC C JP 1, 84(12), 2001, pp. 22-31
Citations number
18
Categorie Soggetti
Information Tecnology & Communication Systems
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART I-COMMUNICATIONS
ISSN journal
87566621 → ACNP
Volume
84
Issue
12
Year of publication
2001
Pages
22 - 31
Database
ISI
SICI code
8756-6621(2001)84:12<22:SOTWTM>2.0.ZU;2-J
Abstract
Due to their great fabrication flexibility, multilayered conductive thin fi lms are used as a shielding material by thin film metal plating on a dielec tric body. In the simulation of the shielding effect of these multilayered thin conducting films by the FDTD method, it is necessary to use a cell siz e less than the conductor thickness in direct modeling. However, since the shield material generally is much thicker than the metal thin film, the num ber of cells needed in such modeling is prohibitive and calculation becomes difficult. In this paper, as a subcell method in the FDTD approach, an inf initesimally thin resistive film that has a transmission coefficient equiva lent to the multilayered conducting thin film is introduced. By this techni que, modeling becomes possible without increasing the number of cells unnec essarily. (C) 2001 Scripta Technica, Electron Comm Jpn Pt 1, 84(12): 22-31, 2001.