The x-ray diffraction intensity from antiphase boundaries (APBs) in a quadr
uple-period ordered GaAsSb alloy is derived introducing statistical probabi
lities for these APBs and their associated phase shifts. Through experiment
al fits, we obtain an average distance between the neighboring APBs of appr
oximately 130, 400, and 5 nm along [110], [-110], and [001] directions, res
pectively. The short distance along the [001] growth direction leads to a n
arrow streak along [001] in an intensity contour map. In addition, we find
that the APBs broaden the ordering peaks, while their effect on the intensi
ty ratio between the ordering peaks is negligible. Static atomic displaceme
nts, associated with bond length disparities are also included in the calcu
lations. (C) 2001 American Institute of Physics.