Three-dimensional strain field calculations in multiple InN/AlN wurtzite quantum dots

Authors
Citation
B. Jogai, Three-dimensional strain field calculations in multiple InN/AlN wurtzite quantum dots, J APPL PHYS, 90(2), 2001, pp. 699-704
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
2
Year of publication
2001
Pages
699 - 704
Database
ISI
SICI code
0021-8979(20010715)90:2<699:TSFCIM>2.0.ZU;2-6
Abstract
A detailed calculation of the three-dimensional elastic strain field and Gi bbs free energy in and around InN/AlN wurtzite quantum dots is presented. T he strain tensor is calculated by minimizing the Helmholtz free energy on a three-dimensional grid. The boundary conditions for a free surface are rig orously implemented to enable the strain field and Gibbs free energy at the surface to be modeled realistically. This has implications for the growth of additional layers of dots above a seed layer and can serve as an arbiter for determining possible nucleation sites. Results are presented for a sin gle dot as well as coupled dots. The Gibbs free energy is seen to exhibit s trong minima directly above a layer of seed dots, facilitating vertical ord ering. Under certain conditions, satellite minima can also occur. Using the calculated strain field, the piezoelectric polarization field is also calc ulated. Because of the strong lattice mismatch, the strain field is quite l arge, particularly near the base and apex of the dots. This, in turn, leads to piezoelectric charges with magnitudes as high as 10(14) cm(-2) in regio ns of high strain. (C) 2001 American Institute of Physics.