Study of the effect of grain boundary migration on hillock formation in Althin films

Citation
Dk. Kim et al., Study of the effect of grain boundary migration on hillock formation in Althin films, J APPL PHYS, 90(2), 2001, pp. 781-788
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
2
Year of publication
2001
Pages
781 - 788
Database
ISI
SICI code
0021-8979(20010715)90:2<781:SOTEOG>2.0.ZU;2-L
Abstract
We have studied the effect of grain boundary migration on hillock formation in unpassivated Al thin films during thermal cycling. Hillocking occurs mo re frequently in Al films that experience grain growth during thermal cycli ng than in films with stabilized grain structures. The hillocking frequency is at least four times greater in the films that experience grain growth, as judged by the number of hillocks observed per initial grain boundary tri ple junction. This latter measure takes account of the smaller initial grai n size in the film that experiences grain growth and shows that grain bound ary migration itself must enhance the hillocking frequency. (C) 2001 Americ an Institute of Physics.