We have studied the effect of grain boundary migration on hillock formation
in unpassivated Al thin films during thermal cycling. Hillocking occurs mo
re frequently in Al films that experience grain growth during thermal cycli
ng than in films with stabilized grain structures. The hillocking frequency
is at least four times greater in the films that experience grain growth,
as judged by the number of hillocks observed per initial grain boundary tri
ple junction. This latter measure takes account of the smaller initial grai
n size in the film that experiences grain growth and shows that grain bound
ary migration itself must enhance the hillocking frequency. (C) 2001 Americ
an Institute of Physics.