Model for band-edge electroluminescence from metal-oxide-semiconductor silicon tunneling diodes

Authors
Chen, MJ Liang, EZ Chang, SW Lin, CF
Citation
Mj. Chen et al., Model for band-edge electroluminescence from metal-oxide-semiconductor silicon tunneling diodes, J APPL PHYS, 90(2), 2001, pp. 789-793
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
2
Year of publication
2001
Pages
789 - 793
Database
ISI
SICI code
0021-8979(20010715)90:2<789:MFBEFM>2.0.ZU;2-I
Abstract
A detailed model is proposed to explain the electroluminescence spectrum fr om metal-oxide-silicon tunneling diodes. This model includes phonon-assiste d processes and exciton involvement. According to this model, the main peak and the low-energy tail of the electroluminescence spectrum are attributed to the transverse optical phonon and the two-phonon assisted recombination , respectively. With very few fitting parameters, the model accurately pred icts the measured electroluminescence spectra. (C) 2001 American Institute of Physics.