Electronic band structures of GaInNAs/GaAs compressive strained quantum wells

The electronic structures of the Ga1-xInxNyAs1-y/GaAs compressive strained quantum wells are investigated using 6x6 k.p Hamiltonian including the heav y hole, light hole, and spin-orbit splitting band. By varying the well widt h and mole fraction of N in the well material, the effects of quantum confi nement and compressive strain are examined. The curves of dependence of tra nsition energy on well width and N mole fraction are obtained. The valence subband energy dispersion curves and TE and TM squared optical transition m atrix elements of three possible quantum well structures for emitting 1.3 m um wavelength are given. (C) 2001 American Institute of Physics.