Fabrication and integration possibilities of ultrasmall quantum dots in silicon-on-insulator material

Single-electron transistors utilizing Coulomb blockade effects are promisin g candidates for future silicon based nanoelectronics. We present the fabri cation of such transistors and measurements that reveal Coulomb blockade be havior. Various silicon quantum dots are investigated up to room temperatur e. We employ a dual gate configuration with which we are able to control ou r devices by both a metallic top gate as well as by an in-plane gate. This design principle enhances the integration density. (C) 2001 American Instit ute of Physics.