Photovoltaic properties of Schottky and p-n type solar cells based on polythiophene

Citation
L. Sicot et al., Photovoltaic properties of Schottky and p-n type solar cells based on polythiophene, J APPL PHYS, 90(2), 2001, pp. 1047-1054
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
2
Year of publication
2001
Pages
1047 - 1054
Database
ISI
SICI code
0021-8979(20010715)90:2<1047:PPOSAP>2.0.ZU;2-5
Abstract
The electrical and photovoltaic properties of organic Schottky and p-n type cells have been studied. Schottky devices are based on a spin-coated film of poly(3-butylthiophene) blend with the dye 1,3-bis-(dicyanomethylidene)-2 -(4-dibutylaminobenzylidene)indane which is sandwiched between indium tin o xide (ITO) and gold electrodes. A depletion zone of 9.5 nm thick has been d etermined on a 220-nm-thick film. The conversion efficiency is equal to 0.0 1% under 100 mW cm(-2) white light illumination. Effects of dye loading, fi lm thickness, and light intensity are described. A model based on simple as sumptions is used to fit the photoaction spectra. By evaporation under vacu um of a layer of N,N-'-dimethyl-3,4,9,10-perylenetetracarboxylic diimide be tween the ITO and the polymer film, we have fabricated hybrid polymer-molec ular p-n type photovoltaic cells. The role of this molecule in the photogen eration has been studied. A constant power conversion efficiency of 0.15% h as been measured under white light illumination between 0.2 and 200 mW cm(- 2). (C) 2001 American Institute of Physics.