Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxyon GaAs(001) vicinal surfaces

Authors
Martini, S Quivy, AA Ugarte, D Lange, C Richter, W Tokranov, VE
Citation
S. Martini et al., Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxyon GaAs(001) vicinal surfaces, J CRYST GR, 227, 2001, pp. 46-50
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
46 - 50
Database
ISI
SICI code
0022-0248(200107)227:<46:SBIIQW>2.0.ZU;2-H
Abstract
In the present work, we investigated the influence of step bunching on the optical properties of InGaAs/GaAs quantum wells (QWs) grown by molecular be am epitaxy (MBE) on vicinal surfaces. Photoluminescence (PL) measurements s howed a larger full width at half maximum (FWHM) of the emission coming fro m the QWs grown on the vicinal surfaces with respect to the nominal sample. Transmission-electron-microscopy (TEM) measurements revealed the presence of step bunches that clearly roughen the interfaces of the heterostructures and worsen the optical properties of the samples. (C) 2001 Elsevier Scienc e B.V. All rights reserved.