The fractional-dimensional space approach to MBE-grown quantum-sized semiconductor low-dimensional systems

Authors
Reyes-Gomez, E Matos-Abiague, A de Dios-Leyva, M Oliveira, LE
Citation
E. Reyes-gomez et al., The fractional-dimensional space approach to MBE-grown quantum-sized semiconductor low-dimensional systems, J CRYST GR, 227, 2001, pp. 77-82
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
77 - 82
Database
ISI
SICI code
0022-0248(200107)227:<77:TFSATM>2.0.ZU;2-Z
Abstract
Shallow impurities and excitons in MBE-grown quantum-sized semiconductor lo w-dimension;ll systems are studied within the fractional-dimensional space approach. We present calculations for shallow-donor states in GaAs(Ga,Al)As quantum wells and superlattices and fur excitons in GaAs- (Ga,AI)As quantu m wells and symmetric-coupled double quantum wells. Effects of growth-direc tion applied magnetic fields are also considered. Results are shown to be i n good agreement with previous variational calculations and available exper imental measurements. (C) 2001 Elsevier Science B.V. All rights reserved.