MBE/MEE growth and characterization of C-60-doped GaAs

For the first time, epitaxial growth by MBE/MEE (migration enhanced epitaxy ) and the characterization of C-60 uniformly doped GaAs, C-60 delta -doped GaAs and C-60 delta -doped AlGaAs/GaAs superlattices are reported. Characte rizations by TEM, SIMS, and other morphological or optoelectrical technique s show that the C-60-doping efficiency of MEE is much higher than that of M BE, and C-60 may introduce strong recombination centers. This possibly make s the materials good candidates for the application of fast response optica l detector. (C) 2001 Elsevier Science B.V. All rights reserved.