Modification of GaAs/AlGaAs asymmetrically coupled double quantum well characteristics by proton implantation induced intermixing

Adopting mask during proton implantation, we obtain several areas with diff erent proton implantation in a. single wafer Of GaAs/AlGaAs asymmetrically coupled double quantum M ells (ACDQW) grown by M BE, and investigated the c haracteristics using photoluminescence (PL) and photo-modulated reflectance (PR) spectroscopy. Without rapid thermal annealing, the maximum transition energy shift of 82 meV in a single wafer has been obtained in different ar eas. The diffusion length of Al is deduced according to spectrum, and compa red with that calculated by diffusion coefficient function. It might be ver y useful for both edge-emitting laser or VCSELs in GaAs-based materials to provide index guiding and better optical design for devices. It is also a g ood method to set up a library for optimizing the ion implantation processe s. (C) 2001 Elsevier Science B.V. All rights reserved.