MBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasers

We demonstrate the realization of a quantum cascade laser (QCL) based on st rained In0.04Ga0.96As/Al0.33Ga0.67As/ GaAs grown on GaAs substrate using mo lecular beam epitaxy. The material is compared to a GaAs/Al0.33Ga0.67As str ucture with nominally identical radiative transitions. Lasing at about 10 p m was achieved in the strained and the unstrained material. The strained ma terial shows an improved temperature performance with a T-0 = 112 K between 125 and 200 K and a maximum working temperature of T = 200 K. (C) 2001 Els evier Science B.V. All rights reserved.