High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets

Authors
Yi, Q Bo, BX Zhang, BS Gao, X Zhang, XD Shi, JW
Citation
Q. Yi et al., High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets, J CRYST GR, 227, 2001, pp. 202-205
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
202 - 205
Database
ISI
SICI code
0022-0248(200107)227:<202:HL9NLA>2.0.ZU;2-O
Abstract
The structures of low-divergence 980 nm semiconductor lasers grown by molec ular beam epitaxy are presented. The high-power, lower-beam-divergence lase r consists of an array of closely spaced, tapered waveguides and nonabsorbi ng facets. The emission wavelength is 982 nm. The FWHM of the far-field pat tern is 10 x 28 degrees. Continuous-wave output power of 5.1 W has been ach ieved. (C) 2001 Elsevier Science B.V. All rights reserved.