GaAs/InGaAS/AlGaAs MODFETs with a very thin buffer layer and very high transconductances

Novel structure GaAs/InGaAS/AlGaAs pseudomorphic MODFETs with a p i-n dipol e buried layer and a 200 nm buffer layer have been fabricated with molecula r beam epitaxy and regular wet etching processing technology. The measured transconductance of these MODFETs, with a gate length of 2 mum and a drain- source spacing of 5 mum, are as high as 320 mS/mm. The measured maximum dra in currents of the typical devices are higher than 500 mA/mm. As far as we know, these represent the best results ever reported for MODFETs with simil ar scales (C) 2001 Elsevier Science B.V. All rights reserved.