Oxygen-related deep level defects in solid-source MBE grown GaInP

We report the first observation of oxygen-related deep level defects in sol id-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep leve l transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), ca pacitance-voltage (C-V) profiles, and photoluminescence (PL). Different amo unts of oxygen impurities was introduced into GaInP epilayers by growing wi th different phosphorus cracking temperatures. Four traps vr ere resolved b y DLTS from the GaInP samples. Among them, two traps, with thermal activati on energies of 0.45-0.46 and 0.63 0.82 eV, were found to be oxygen-related. (C) 2001 Elsevier Science B.V. All rights reserved.