Gas source MBE growth of TlInGaAs/InP DH structures for the application toWDM optical fiber communication systems

TlInGaAs/InP double heterostructures (DHs) were grown on (100) InP substrat es by gas source MBE. The photoluminescence (PL) peak energy and its variat ion with temperature decreased with increasing Tl composition. For the DH w ith a Tl composition of 13%, the PL peak energy varied only slightly with t emperature (-0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGa AsP/InP distributed feedback laser diodes (0.1 nm/K). The TiInGaAs/InP ligh t emitting diodes were also fabricated and the similar small temperature va riation for the electroluminescence peak energy was observed. The results a re a great first step to realize the laser diodes with temperature insensit ive lasing wavelength characteristics, which are important in the wavelengt h division multiplexing (WDM) optical fiber communication systems. (C) 2001 Elsevier Science B.V. All rights reserved.