AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers

Recently, we demonstrated InP-based VCSELs at 1.5 mum with record device pe rformance, achieving low threshold currents (<1 mA), threshold voltages (si milar to1 V) and high output powers (>1 mW) at room temperature and under c ontinuous wave conditions (Ortsiefer et al., Appl. Phys. Lett. 76 (2000) 21 79). In this presentation, we describe the epitaxial growth methods applied for the realization of these high-performance devices. For growing suitabl e device structures, a very good reproducibility of device parameters, such as the center wavelength of the distributed Bragg reflector, the emission wavelength of the active region and the lasing mode, as well as the possibi lity to fabricate new tailored devices without great effort are required. A n in-situ control technique using the standard pyrometer is a simple and ef ficient method to monitor growth rates and to enable an in-situ adjustment of growth parameters for tile control of lattice matching and layer thickne sses. Using this technique, VCSELs in the 1.5-1.8 mum wavelength range with excellent performance have been fabricated. (C) 2001 Elsevier Science B.V. All rights reserved.