Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

Strain compensated 1.3 mum InasP/InGaAsP laser structures have been grown b y using gas sourer MBE and the ridge waveguide laser diodes have been fabri cated. The temperature characteristics of those laser chips have been inves tigated in detail. The ridge type laser chips show threshold current about 10 mA at room temperature, with slope efficiency greater than 0.35 W/A/un-c oated facet. The characteristic temperature of the threshold current were g reater than 90 K from 72 degreesC to 90 degreesC. The spectral and far fiel d characteristics of those laser chips also have been investigated. (C) 200 1 Elsevier Science B.V. All rights reserved.