Citation
Gk. Kuang et al., Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE, J CRYST GR, 227, 2001, pp. 334-337
Citations number
10
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
227
Year of publication
2001
Pages
334 - 337
Database
ISI
SICI code
0022-0248(200107)227:<334:LWILGI>2.0.ZU;2-R
Abstract
We have grown InGaAs-InGaAlAs-InP strained quantum well lasers with wavelen
gth up to 2.2 mum in solid-source molecular-beam epitaxy. A continuous-wale
threshold current density of 370 A/cm(2) at room temperature has been achi
eved for 2.2 mum lasers. Continuous-wave operation at temperature as high a
s 100 degreesC has been demonstrated and a characteristic temperature of 72
K has been achieved for 1.79 mum lasers. (C) 2001 Elsevier Science B.V. Al
l rights reserved.