InGaAs/InGaAsP microdisk lasers grown by GSMBE

Citation
Gz. Wu et al., InGaAs/InGaAsP microdisk lasers grown by GSMBE, J CRYST GR, 227, 2001, pp. 343-345
Citations number
4
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
343 - 345
Database
ISI
SICI code
0022-0248(200107)227:<343:IMLGBG>2.0.ZU;2-7
Abstract
Optical resonance modes have been observed in optically pumped microdisk ca vities fabricated from 80 Angstrom /50 Angstrom InGaAs/InGaAsP multiple qua ntum wells structures grown by gas-source molecular beam epitaxy. We have a chieved optically pumped InGaAs/InGaAsP multiquantum Wells microdisk lasers at a pump power threshold of P-th = 150 muW at pump wavelength lambda = 51 4.5 nm, which was measured for a 10 mum-diameter disk with lasing emission wavelength near lambda = 1.6 mum. (C) 2001 Elsevier Science B.V. All rights reserved.