Resonant cavity light-emitting diodes grown by solid source MBE

Authors
Orsila, S Leinonen, T Uusimaa, P Saarinen, M Guina, M Sipila, P Vilokkinen, V Melanen, P Dumitrescu, M Pessa, M
Citation
S. Orsila et al., Resonant cavity light-emitting diodes grown by solid source MBE, J CRYST GR, 227, 2001, pp. 346-351
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
346 - 351
Database
ISI
SICI code
0022-0248(200107)227:<346:RCLDGB>2.0.ZU;2-7
Abstract
We report solid source molecular beam epitaxy growth of visible, 650-nm ran ge, resonant cavity light-emitting diodes. Devices operating at red wavelen gths utilise an (AlxGa1-x)(y)In1-yP active region and AlxGa1-xAs distribute d Bragg reflectors. Components with an emitting window of 84 mum exhibit a record high external quantum efficiency of 6.5% and output power of 2 mW. ( C) 2001 Elsevier Science B.V. All rights reserved.