Growth of GaNAs films by molecular beam epitaxy

We have investigated arsenic doping of GaN films grown at high temperature (similar to 800 degreesC) by molecular beam epitaxy. Growth in an arsenic e nvironment changes the growth mode and promotes the growth of the cubic pol ytype. Growth under arsenic also produces films which show strong blue emis sion at room temperature, whose intensity is dependent on both the As Ru,v and the Ga:N ratio. We propose a growth model based on As incorporation ont o the Ga sublattice, which can explain all of our observed data (C) 2001 El sevier Science B.V. All rights reserved.