RF-MBE growth and Raman scattering characterization of lattice-matched GaInNAs on GaAs(001) substrates

Authors
Hashimoto, A Furuhata, T Kitano, T Nguyen, AK Masuda, A Yamamoto, A
Citation
A. Hashimoto et al., RF-MBE growth and Raman scattering characterization of lattice-matched GaInNAs on GaAs(001) substrates, J CRYST GR, 227, 2001, pp. 532-535
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
532 - 535
Database
ISI
SICI code
0022-0248(200107)227:<532:RGARSC>2.0.ZU;2-S
Abstract
RF-MBE growth of GaInNAs systems on GaAs(0 0 1) substrates and Raman charac terizations of the local structures of the grown layers have been investiga ted. Indium beam irradiation during the GaInNAs growth has a strong influen ce on the nitrogen incorporation to the grown layers. Raman scattering meas urements have revealed that the formation of ordered domains such as (GaN)( GaAs) natural superlattice cluster in the GaInNAs layers is suppressed by t he In incorporation.. (C) 2001 Elsevier Science B.V. All rights reserved.