Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

We report the growth of strain-compensated GaInNAs/GaAsP quantum well struc tures and lasers by gas-source molecular beam epitaxy with a RF-couplcd pla sma source for nitrogen activation. The influence of growth temperature and rapid thermal annealing ( RTA) on the optical properties of GaInNAs/GaAsP quantum well structures were studied. RTA was found to significantly increa se the photoluminescence from the quantum wells and reduce the threshold cu rrent density of the lasers, mainly due to a removal of N induced non-radia tive centers from GaInNAs wells. (C) 2001 Elsevier Science B.V. All rights reserved.