Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes

We have studied the effects of N incorporation in Ga(In)P and explored thei r applications for light-emitting diodes (LEDs). The GaInNP epilayers were grown on (1 0 0) GaP substrates by gas-source MBE using an RF nitrogen radi cal beam source. Red LEDs based on GaN0.011 P-0.989/GaP double-heterostruct ure grown on (1 0 0) Gap substrates were successfully fabricated. Compared to conventional AlGaInP LEDs, this LED eliminates etching of the GaAs subst rate and wafer-bonding of a transparent GaP substrate. Partially relaxed Ga N0.011P0.989 active layers, however, degraded the emission efficiency. Inco rporation of In in GaN0.015P0.985 alloy to lattice-match to GaP not only ma intains the direct band gap. but also improves the sample structural qualit y and increases the integrated PL intensity by 40%, compared to GaN0.015P0. 985. (C) 2001 Elsevier Science B.V. All rights reserved.