MBE grown 2.0 mu m InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes

Two micron wavelength InGaAsSb/AlGaAsSb multi-quantum well laser structures have been grown by using solid source MBE, and ridge type diode laser chip s with narrow ridge width have been fabricated. The performance of this MBE grown 2 mum wavelength lasers have been evaluated on chip level without ch ip mounting and wire bonding. The laser chips show a threshold current of a bout 75 and 1231nA at OC and 40 degreesC, respectively, with a characterist ic temperature T-0 of 79 K. Maximum output power was greater than 25 mW per uncoated facet below 40 degreesC, with no observable kink. Maximum lasing temperature greater than 80 degreesC has been achieved in quasi-CW driving conditions. Fairly good single mode lasing characteristics have been observ ed under pulsed driving condition in 0-60 degreesC range, with a temperatur e tuning coefficient of 0.78 nm/degreesC. (C) 2001 Elsevier Science B.V. Al l rights reserved.