MBE growth of mid-infrared antimonide LEDs with strained electron barriers

Authors
Li, X Heber, J Pullin, M Gevaux, D Phillips, CC
Citation
X. Li et al., MBE growth of mid-infrared antimonide LEDs with strained electron barriers, J CRYST GR, 227, 2001, pp. 600-604
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
600 - 604
Database
ISI
SICI code
0022-0248(200107)227:<600:MGOMAL>2.0.ZU;2-Z
Abstract
InAs/InAsxSb1-x single quantum well (SQW) p i-n structures have been grown on p(4)-InAs(0 0 1) substrates by molecular-beam epitaxy. Significant impro vements in SQW light emitting diode performance have been realized by the i ncorporation of strained electron barrier layers. Room temperature performa nce has increased by a factor of up to 7. Additional 4 K magneto-electro-lu minescence measurements demonstrate the good materials quality. (C) 2001 El sevier Science B.V. All rights reserved.