Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy

We report on the growth of two types of GaInAsSb detector structures by sol id source molecular beam epitaxy. One structure is capped with an AlGaAsSb window layer, and the other is a conventional PIN detector. The fabrication and performance of detectors are also reported. As a result of suppression of surface recombination, the dark reverse saturate current for the detect or capped with window is much lower than the other type of detector. Black body detectivity D-bb(*) of the detector with an AlGaAsSb window is 5.0 x 1 0(8) cm Hz(1/2)/W, and voltage responsivity R-v is 78 V/W at 300 K. For det ectors without window, D-bb(*) is 5.1 x 10(8) cm Hz(1/2)/W, and R-v is 37 V /W at 300 K. Relative spectral response is also measured. The peak response wavelength is 2.19 mum at room temperature. (C) 2001 Elsevier Science B.V. All rights reserved.