Growth and characterization of InMnAsSb for the sensor-memory device application at long wavelength region

A new diluted magnetic III-V semiconductor In1-xMnxAs1-ySby was grown by me talorganic molecular beam epitaxy. Raman scattering measurements were perfo rmed on InMnAs samples. The recorded spectra showed coupled LO phonon-plasm on mode. The behavior of this coupled LO phonon-plasmon mode indicated that InMnAs layers are p-type. The light-induced ferromagnetic order was confir med in the InMnAs layers and was observed, fur the first time, in the InMnA sSb/InSb heterostructures under the irradiation of long wavelength (> 2 mum ) light. The results are explained in terms of hole accumulation in the InM nAsSb layer, which enhances the ferromagnetic spill exchange among Mn ions. The sample with InMnAsSb layer grown on InSb at 250 degreesC showed larger ferromagnetic order than that Brown at 280 degreesC. (C) 2001 Elsevier Sci ence B.V. All rights reserved.