InSb thin films grown on GaAs substrate and their magneto-resistance effect

Authors
Okamoto, A Ashihara, A Akaogi, T Shibasaki, I
Citation
A. Okamoto et al., InSb thin films grown on GaAs substrate and their magneto-resistance effect, J CRYST GR, 227, 2001, pp. 619-624
Citations number
3
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
619 - 624
Database
ISI
SICI code
0022-0248(200107)227:<619:ITFGOG>2.0.ZU;2-G
Abstract
InSb thin films were grown on GaAs (1 0 0) substrates by molecular beam epi taxy (MBE). N-type impurity (Sn and Si) doping Of InSb was investigated for the purpose of reducing its temperature dependence of resistivity. It was found that stable Sn-doped InSb thin films with large electron mobility (4. 5 x 10(4) cm(2)/Vs) and sheet electron concentration (7.2 x 10(12) cm(-2)) can be fabricated. Magneto-resistance (MR) devices using these films show a large enough MR effect and an extremely small temperature dependence of re sistance. (C) 2001 Elsevier Science B.V. All rights reserved.