Growth of ZnCdSe quantum wells at low substrate temperatures using migration enhanced epitaxy

In order to optimize the growth conditions for ZnCdSe quantum wells (QWs) u sed as active region in ZnSe-based laser diodes, the influence of different growth parameters on their optical and structural properties have been inv estigated. To avoid cadmium diffusion and segregation out of the QWs, low-t emperature growth is highly desirable. At the same time, to maintain a high crystal quality, migration enhanced epitaxy was used and the ternary compo und has been grown as a CdSe/ZnSe sub-monolayer superlattice (SMSL), This g rowth technique results in a distinct improvement of structural as M-ell as optical properties compared to QWs grown by conventional molecular beam ep itaxy. These improvements are accompanied by an increase in the internal qu antum efficiency of light emitting diodes. However, up to now, no significa nt influence on other device characteristics was found. A laser diode based on a SMSL working in continuous wave mode at room temperature could be rea lized (C) 2001 Elsevier Science B.V. All rights reserved.