In this paper, a reproducible method for the growth of high quality ZnS, Zn
CdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in
lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peak
s and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have
been produced. While the ZnS QWs show excellent full-width at half-maximum,
strong, broadening is observed in the latter system which is believed to a
rise from strain induced inhomogeneities in the alloy composition. (C) 2001
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