Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

Authors
Prior, KA Telfer, SA Tang, X Morhain, C Urbaszek, B O'Donnell, C Tomasini, P Balocchi, A Cavenett, BC
Citation
Ka. Prior et al., Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP, J CRYST GR, 227, 2001, pp. 655-659
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
655 - 659
Database
ISI
SICI code
0022-0248(200107)227:<655:GO(A(C>2.0.ZU;2-M
Abstract
In this paper, a reproducible method for the growth of high quality ZnS, Zn CdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peak s and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong, broadening is observed in the latter system which is believed to a rise from strain induced inhomogeneities in the alloy composition. (C) 2001 Elsevier Science B.V. All rights reserved.