MBE growth of BeZnCdSe quaternaries, MgSe/BeZnCdSe superlattice and quantum well structures on InP substrates

BeZnCdSe quaternaries, MgSe/BeZnCdSe superlattice (SL) and BeZnCdSe quantum well (QW) structures were grown on InP substrates by molecular beam epitax y for the first time. As for a lattice-matched Be-0.08(Zn0.30Cd0.70)(0.92)S e sample, a single-peak photoluminescence (PL) spectrum was observed at the temperature range from 15K to room temperature. The PL peak wavelength and the full-width at half-maximum (FWHM) value at 15 K were 572 nm and 8.8 me V, respectively. PL measurements of MgSe/BeZnCdSe SL samples were observed single-peak emissions in the green-to-blue color range from 525 to 470 nm a t 15 K with changing MgSe layer-thickness ratio from 0.20 to 0.60. As for t he QW sample consisting of four BeZnCdSe QWs with a different well width, P L peaks corresponding to each QW were observed in the wavelength range from 459 to 561 nm at 15 E(. By fitting calculated transition energies in the Q Ws to the PL peak energies. the band offset ratio between the BeZnCdSe well and the MgSe/BeZnCdSe SL barrier was estimated to be DeltaE(c) : DeltaE(v) = 9 : 1. (C) 2001 Elsevier Science B.V. All rights reserved.