MBE-based SiGe/Si heterojunction multilayer structures

In this paper, SiGe/Si multilayer heterostructures prepared by molecular be am epitaxy (MBE) are described with the aim of manufacturing SiGe heterojun ction bipolar transistors (HBTs). Based on the simulations made by Medici, device structures have been designed and grown. The quality of the MBE laye red structures has been characterized by reflection high-energy electron di ffraction, X-ray diffraction, secondary ion mass spectrometry and spreading resistance. Furthermore, SiGe-HBTs have been fabricated. Promising DC and RF results of processed HBT devices have been obtained. (C) 2001 Elsevier S cience B.V. All rights reserved.