Optical in situ monitoring of complex oxide thin film laser molecular beamepitaxy

Citation
F. Chen et al., Optical in situ monitoring of complex oxide thin film laser molecular beamepitaxy, J CRYST GR, 227, 2001, pp. 950-954
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
950 - 954
Database
ISI
SICI code
0022-0248(200107)227:<950:OISMOC>2.0.ZU;2-I
Abstract
We report the optical in situ monitoring results of the laser molecular bea m epitaxial growth of complex oxide thin films using an oblique-incidence r eflectance difference (OIRD) technique. The sub-monolayer sensitivity, opti cal interference oscillations, monolayer response observed for heteroepitax y, and the surface kinetics study of OIRD measurement are presented. By usi ng a four-layer stack model, the interference oscillations and the monolaye r response are reproduced with Fresnel's formulas for multi-layers. (C) 200 1 Elsevier Science B.V. All rights reserved.