Self-assembled GaInAs quantum wire heterostructure design for temperature stabilized emission wavelength

The strain-induced lateral-layer ordering process is used to fabricate GaIn As quantum wire (QWR) heterostructures on (100)-InP via molecular beam epit axy. Using photoluminescence (PL) spectroscopy, the effect of the barrier m aterial between QWR layers on the peak PL behavior with respect to temperat ure is investigated. In addition, two types of growth interrupt schemes wer e used to optimize the PL characteristics of the QWR heterostructure. Growt h pauses during the deposition of the QWR layer were explored as a ell as g rowth pauses in between the QWR layer and barrier material. Consequently, p eak PL wavelengths stabilized to less than 1 Angstrom/degreesC above room t emperature have been obtained for GaInAs QWR heterostructures using nominal ly lattice-matched AlGaInAs barriers and QWR-barrier growth interrupts to i mprove PL intensity. It is shown that strain is the main factor behind this PL behavior with respect to temperature. (C) 2001 Elsevier Science B.V. Al l rights reserved.