Effects of regularity of honeycomb hollows formed by the anodization of GaAs substrates on the molecular-beam epitaxial growth of InAs dots

InAs dots were grown by molecular-beam epitaxy on honeycomb hollows formed by anodization of GaAs substrates. It was found that InAs dots were selecti vely grown at the bottom of honeycomb hollows formed by anodization of GaAs substrates in an NH4OH solution. The average size of InAs dots and its coe fficient of variation on anodized substrates were considerably affected by the regularity of hollows, In the case of the growth on a high-ordered holl ow array, the average diameter (37.4 nm) and standard deviation (15.3 nm) w ere comparable to those obtained for InAs dots grown on an unpatterned subs trate. On the other hand, in the case of the growth on a low-ordered hollow array, the average diameter (48.0 nm) and standard deviation (19.4 nm) wer e about 30% larger than those obtained for InAs dots grown on an unpatterne d substrate, (C) 2001 Elsevier Science B.V. All rights reserved.