Indium segregation in the fabrication of InGaAs concave disks by heterogeneous droplet epitaxy

Citation
T. Mano et al., Indium segregation in the fabrication of InGaAs concave disks by heterogeneous droplet epitaxy, J CRYST GR, 227, 2001, pp. 1069-1072
Citations number
19
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
227
Year of publication
2001
Pages
1069 - 1072
Database
ISI
SICI code
0022-0248(200107)227:<1069:ISITFO>2.0.ZU;2-3
Abstract
We have studied the effects of As-4 flux intensity during crystallization p rocess and sample temperature during annealing process on the structural an d optical properties of InGaAs (quantum dots) QDs fabricated bp heterogeneo us droplet epitaxy method. The QDs formation mechanism including In segrega tion and InAs-GaAs intermixing was investigated. We found the very wide opt imum growth conditions, such as photoluminescence peak energy is constant, intensity is maximum value and full-width at half-maximum is minimum value. (C) 2001 Elsevier Science B.V, All rights reserved.