We have studied the effects of As-4 flux intensity during crystallization p
rocess and sample temperature during annealing process on the structural an
d optical properties of InGaAs (quantum dots) QDs fabricated bp heterogeneo
us droplet epitaxy method. The QDs formation mechanism including In segrega
tion and InAs-GaAs intermixing was investigated. We found the very wide opt
imum growth conditions, such as photoluminescence peak energy is constant,
intensity is maximum value and full-width at half-maximum is minimum value.
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