1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots

Basic development steps towards the molecular beam epitaxy growth of AlGaAs /GaAs microcavity structures are presented, which contain self-organized In As/GaInAs quantum dots as the active medium. The emission wavelength of the se structures can be controllably adjusted within 1260-1340 nm by variation of the deposition parameters of the epitaxial layers without the use of an y real-time monitoring technique. Based on quantum dot active material with optimized optical emission properties and accurately calibrated layer thic knesses microcavity light emitting diodes were fabricated. 40 mum diameter devices, as characterized on-wafer, showed narrow electroluminescence spect ra (FWHM: 13-26 nm) centered at 1310 1325 mm and narrow circular beam width s of FWHM < 10 degrees were obtained on mounted devices. (C) 2001 Elsevier Science B.V. All rights reserved.