Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasersemitting at 980 nm

Using solid source molecular beam epitaxy, quantum dot lasers with a single active layer have been fabricated, The influence of the waveguide design o n basic device properties has been investigated. Through the use of a large vertical cavity a significant reduction in threshold current density could be achieved. Slope efficiencies of more than 1 W/A and absorption levels a s low as 2.6cm(-1) could be realized. First high power devices with wall-pl ug efficiencies of up to 50% were fabricated, demonstrating the high qualit y of these quantum dot lasers, (C) 2001 Elsevier Science B,V. All rights re served.