1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

Molecular beam epitaxy growth of InAs/InGaAs quantum dot (QD) structures on GaAs substrates for 1.3 mum laser applications is discussed. Long-stripe e dge-emitting lasers demonstrate low threshold current density (< 100 A/cm(2 )), high differential efficiency (> 50%) and low internal loss (similar to1 -2 cm(-1)). Maximum output continuous-wave power for broad-area lasers is a s high as 2.7 W. Narrow stripe (7 mum) lasers demonstrate single transverse mode operation with the maximum kink-free power of 110 mW. 1.3 mum vertica l cavity surface emitting lasers were successfully fabricated from the stru ctures with three QD planes inserted into the optical microcavity with AlO- GaAs Bragg: reflectors. The output power is 220 mW at a drive current of 2. 4 mA under pulsed mode for the device with the 8 x 8 mum oxidized aperture. (C) 2001 Elsevier Science B.V. All rights reserved.