Effects of systematic methyl substitution of metal (III) tris(n-methyl-8-quinolinolato) chelates on material properties for optimum electroluminescence device performance

We relate the chemical structure of a series of methyl (Me) substituted gro up III metal tris(8-quinofinolato) chelates (nMeq(3)M: n = 0, 3, 4, 5; M = Al3+, Ga3+) to their photoluminescence (PL), electroluminescence, and therm al properties. Methylation of the 8-quinolinol ligand at the 3 or 4 positio n (pyridyl ring) results in a factor of 1.4 and 3.0 enhancement of PL quant um efficiency (phi (PL)). respectively, whereas methylation at the 5 positi on (phonoxide ring) results in a factor of similar to3.0 decrease in phi (P L) relative to the unsubstituted analogue. Electroluminescent quantum effic iencies of undoped organic light-emitting devices using the aluminum tris(8 -quinolinolato) chelates are 1, 0.45, 1.4, and 0.80% for unsubstituted 5-, 4-, and 3-methyl-8-quinolinol ligands, respectively. Devices made with the latter two ligands have a higher operating voltage to generate the same cur rent density. Similar trends were observed for methylation of gallium tris( 8-quinolinolato) chelates. We relate these results to the thermal propertie s of the compounds measured by simultaneous differential scanning calorimet ry and thermal gravimetric analysis. The C-4 methylated derivatives exhibit similar to 60 degreesC lower crystalline melting points than all other der ivatives, indicating the weakest cohesive forces between molecules. Unlike Alq(3), both the C-4 and C-5 methylated derivatives show no recrystallizati on of the glassy state below 500 degreesC and exhibit similar to 20-25 degr eesC higher glass transition temperatures. We infer that methylation of the 8-quinolinol ligand reduces intermolecular interactions and consequently i mpedes charge transport through the film.