The nonlinear electrical properties of TiO2-Y2O4-Nb2O5 ceramics were invest
igated as a new varistor material. It was found that an optimal doping comp
osition of 99.75%TiO2-0.60%Y2O5-0.10% Nb2O5 was obtained with low breakdown
voltage of 8.8 V mm(-1) high nonlinear constant of 7.0 and ultrahigh relat
ive dielectric constant of 7.6 x 10(4), which is consistent with the highes
t and narrowest grain boundary barriers in the composition. Samples doped w
ith 0.10 mol.% Nb2O5 exhibit the highest permittivitty and resistivity at l
ow frequencies and comparatively lower values at high frequencies in compar
ison with other samples studied. In view of these electrical characteristic
s. the ceramics of 99.75%TiO2-0.60%Y2O3-0.10%Nb2O5 is a viable candidate fo
r capacitor-varistor functional devices. The performance of the ceramics as
a function of Nb-doping depends primarily on the extent of substitution of
Ti4+ with Nb5+. In order to illustrate the role of grain boundary barriers
for high Nb-doping co-concentrations in TiO2-Y2O3-Nb2O5 varistors, a grain
-boundary defect barrier model was introduced. (C) 2001 Elsevier Science B.
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